N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 10A continuous drain current. Offers a typical 0.48 Ohm drain-source on-resistance, with a maximum of 520mR. Designed for through-hole mounting in a TO-220FP package, this component operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 30W. Key switching characteristics include a 15ns fall time and 14.5ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STP11NK50ZFP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
520mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
520MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
9.3mm
Input Capacitance
1.39nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
520mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
41ns
Turn-On Delay Time
14.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NK50ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP11NK50ZFP to view detailed technical specifications.
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