Stmicroelectronics
STP11NM60A
11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
PackageTO-220AB
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP11NM60A technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.211nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Rds On Max
450mR
RoHS Compliant
Yes
Series
MDmesh™
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM60A Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM60A to view detailed technical specifications.
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