N-Channel 600V POWER MOSFET featuring FDmesh™ technology. Offers 11A continuous drain current and a low 450mΩ drain-source on-resistance. Includes a fast recovery diode for enhanced switching performance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 35W. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP11NM60FDFP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
450mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
900pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
35W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™
Threshold Voltage
4V
Turn-On Delay Time
20ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM60FDFP Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM60FDFP to view detailed technical specifications.
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