N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 0.4 Ohm drain-source on-resistance and 35W power dissipation. Designed with a TO-220 package, it boasts fast switching characteristics with turn-on delay of 20ns and fall time of 11ns. Operating across a wide temperature range from -65°C to 150°C, this RoHS compliant device is suitable for demanding power applications.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP11NM60FP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
35W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Rds On Max
450mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
6ns
Turn-On Delay Time
20ns
DC Rated Voltage
650V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM60FP Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM60FP to view detailed technical specifications.
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