N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 0.4 Ohm drain-source on-resistance and 35W power dissipation. Designed with a TO-220 package, it boasts fast switching characteristics with turn-on delay of 20ns and fall time of 11ns. Operating across a wide temperature range from -65°C to 150°C, this RoHS compliant device is suitable for demanding power applications.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STP11NM60FP technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 650V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP11NM60FP Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM60FP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
