N-channel power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 450mΩ and a typical input capacitance of 850pF. Designed for power applications, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 90W. The TO-220 package ensures robust thermal performance, with fast switching characteristics including a 22ns turn-on delay and 12ns fall time. This RoHS compliant device is ideal for high-voltage switching applications.
PackageTO-220
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP11NM60N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
370mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
450MR
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
50ns
Turn-On Delay Time
22ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM60N to view detailed technical specifications.
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