N-channel MOSFET with 40V drain-source breakdown voltage and 120A continuous drain current. Features low 5mΩ drain-source on-resistance at a nominal 4.5V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 300W. Packaged in a TO-220 through-hole mount with a 50-piece rail/tube quantity. RoHS compliant and lead-free.
PackageTO-220
Current Rating120A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP120NF04 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
120A
Current Rating
120A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
40V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.1nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4.5V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
4.5V
Turn-Off Delay Time
80ns
DC Rated Voltage
40V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP120NF04 Datasheet
Download the complete datasheet for Stmicroelectronics STP120NF04 to view detailed technical specifications.
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