N-channel power MOSFET featuring 100V drain-source breakdown voltage and 110A continuous drain current. This through-hole component offers a low 9 mOhm typical drain-source on-resistance and a maximum power dissipation of 312W. Operating across a wide temperature range of -55°C to 175°C, it is housed in a TO-220 package. Key switching characteristics include a 25ns turn-on delay and 68ns fall time.
PackageTO-220
Current Rating120A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP120NF10 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
110A
Current Rating
120A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
10.5mR
Fall Time
68ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
5.2nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
312W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
312W
Radiation Hardening
No
Rds On Max
10.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
4V
Turn-Off Delay Time
132ns
Turn-On Delay Time
25ns
DC Rated Voltage
100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP120NF10 Datasheet
Download the complete datasheet for Stmicroelectronics STP120NF10 to view detailed technical specifications.
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