N-CHANNEL POWER MOSFET with 600V drain-to-source breakdown voltage and 10A continuous drain current. Features 0.64 ohm maximum drain-to-source resistance (Rds On) at a nominal Vgs of 3.75V. Operates with a gate-to-source voltage up to 30V and offers a maximum power dissipation of 150W. This through-hole component is housed in a TO-220 package, with a fall time of 31.5ns and turn-off delay time of 55ns. RoHS compliant and lead-free.
PackageTO-220
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP12NK60Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 31.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.74nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 640mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 55ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP12NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STP12NK60Z to view detailed technical specifications.
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