N-CHANNEL POWER MOSFET with 600V drain-to-source breakdown voltage and 10A continuous drain current. Features 0.64 ohm maximum drain-to-source resistance (Rds On) at a nominal Vgs of 3.75V. Operates with a gate-to-source voltage up to 30V and offers a maximum power dissipation of 150W. This through-hole component is housed in a TO-220 package, with a fall time of 31.5ns and turn-off delay time of 55ns. RoHS compliant and lead-free.
PackageTO-220
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP12NK60Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
530mR
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
600V
Fall Time
31.5ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.74nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
3.75V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Rds On Max
640mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Termination
Through Hole
Turn-Off Delay Time
55ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STP12NK60Z to view detailed technical specifications.
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