N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 10.5A continuous drain current. This component offers a low 0.65 Ohm (750mR) drain-source on-resistance and 190W power dissipation. Designed for through-hole mounting in a TO-220 package, it includes Zener protection and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 30ns turn-on delay and 20ns fall time.
PackageTO-220
Current Rating10.5A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STP12NK80Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10.5A
Current Rating
10.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
750mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
2.62nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
70ns
Turn-On Delay Time
30ns
DC Rated Voltage
800V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STP12NK80Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.