N-channel power MOSFET featuring 500V drain-source breakdown voltage and 12A continuous drain current. Offers 400mΩ maximum drain-source on-resistance and 160W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this RoHS compliant component boasts fast switching speeds with turn-on delay time of 19ns and fall time of 18ns. Operates within a temperature range of -65°C to 150°C.
PackageTO-220AB
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP12NM50FD technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP12NM50FD Datasheet
Download the complete datasheet for Stmicroelectronics STP12NM50FD to view detailed technical specifications.
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