N-channel power MOSFET featuring 500V drain-source breakdown voltage and 12A continuous drain current. Offers 400mΩ maximum drain-source on-resistance and 160W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this RoHS compliant component boasts fast switching speeds with turn-on delay time of 19ns and fall time of 18ns. Operates within a temperature range of -65°C to 150°C.
PackageTO-220AB
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP12NM50FD technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
12A
Current Rating
12A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
500V
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
400mR
RoHS Compliant
Yes
Series
FDmesh™
Turn-Off Delay Time
39ns
Turn-On Delay Time
19ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12NM50FD Datasheet
Download the complete datasheet for Stmicroelectronics STP12NM50FD to view detailed technical specifications.
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