Stmicroelectronics
STP12NM60N
10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP12NM60N technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
410mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
410mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
960pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Rds On Max
410mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
60ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP12NM60N to view detailed technical specifications.
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