N-channel power MOSFET featuring 100V drain-source breakdown voltage and 120A continuous drain current. This device offers a low 8 mOhm typical drain-source on-resistance and 250W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 7.2ns fall time and 17ns turn-on delay time. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
Stmicroelectronics STP130N10F3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9.6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 9.6MR |
| Fall Time | 7.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.305nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 9.6mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP130N10F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP130N10F3 to view detailed technical specifications.
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