N-channel power MOSFET featuring 100V drain-source breakdown voltage and 120A continuous drain current. This device offers a low 8 mOhm typical drain-source on-resistance and 250W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 7.2ns fall time and 17ns turn-on delay time. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
Stmicroelectronics STP130N10F3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
9.6mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
9.6MR
Fall Time
7.2ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.305nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
250W
Radiation Hardening
No
Rds On Max
9.6mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
52ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP130N10F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP130N10F3 to view detailed technical specifications.
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