N-channel Power MOSFET with 800V drain-source breakdown voltage and 12A continuous drain current. Features low on-resistance of 370mΩ (typical) and 450mΩ (max) at 10Vgs. Operates with a gate-source voltage up to 30V and offers fast switching times with turn-on delay of 16ns and fall time of 16ns. Packaged in a TO-220-3 through-hole mount with a maximum power dissipation of 190W. RoHS compliant and suitable for a wide operating temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP13N80K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
370mR
Drain to Source Voltage (Vdss)
800V
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
870pF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
450mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
42ns
Turn-On Delay Time
16ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP13N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP13N80K5 to view detailed technical specifications.
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