N-channel Power MOSFET with 800V drain-source breakdown voltage and 12A continuous drain current. Features low on-resistance of 370mΩ (typical) and 450mΩ (max) at 10Vgs. Operates with a gate-source voltage up to 30V and offers fast switching times with turn-on delay of 16ns and fall time of 16ns. Packaged in a TO-220-3 through-hole mount with a maximum power dissipation of 190W. RoHS compliant and suitable for a wide operating temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP13N80K5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 370mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 870pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 16ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP13N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP13N80K5 to view detailed technical specifications.
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