N-channel SuperMESH3™ Power MOSFET featuring 950V drain-source breakdown voltage and 10A continuous drain current. Offers a typical drain-source on-resistance of 0.68 Ohm, with a maximum of 0.85 Ohm. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 190W. Key switching characteristics include a 21ns fall time, 18ns turn-on delay, and 50ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP13N95K3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
680mR
Drain to Source Voltage (Vdss)
950V
Drain-source On Resistance-Max
850mR
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
1.62nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
850mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
4V
Turn-Off Delay Time
50ns
Turn-On Delay Time
18ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP13N95K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP13N95K3 to view detailed technical specifications.
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