N-channel power MOSFET with 500V drain-source breakdown voltage and 11A continuous drain current. Features 480mΩ maximum drain-source resistance (Rds On) and 140W power dissipation. Operates from -55°C to 150°C with a 3.75V nominal gate-source threshold voltage. Through-hole mounting in a TO-220 package. RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
Stmicroelectronics STP13NK50Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Termination | Through Hole |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 61ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP13NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STP13NK50Z to view detailed technical specifications.
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