N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This device offers a low 280 mOhm typical drain-source on-resistance and is housed in a TO-220 package for through-hole mounting. Key electrical characteristics include a 3V threshold voltage and 790pF input capacitance, with fast switching times of 3ns turn-on delay and 10ns fall time. Maximum power dissipation is rated at 90W, operating within a temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
Quick Jump:
Technical Specifications
Stmicroelectronics STP13NM60N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
360mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
360mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
790pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Nominal Vgs
3V
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
360mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
30ns
Turn-On Delay Time
3ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP13NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP13NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
