N-channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers a low 0.0065 Ohm typical drain-source on-resistance. Housed in a TO-220AB through-hole package, this device supports a maximum power dissipation of 300W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 30ns and fall time of 45ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STP141NF55 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
8mR
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.3nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
125ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP141NF55 Datasheet
Download the complete datasheet for Stmicroelectronics STP141NF55 to view detailed technical specifications.
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