N-channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers a low 0.0065 Ohm typical drain-source on-resistance. Housed in a TO-220AB through-hole package, this device supports a maximum power dissipation of 300W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 30ns and fall time of 45ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STP141NF55 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP141NF55 Datasheet
Download the complete datasheet for Stmicroelectronics STP141NF55 to view detailed technical specifications.
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