N-Channel Power MOSFET, 120V Drain to Source Breakdown Voltage, 14A Continuous Drain Current, and 180mΩ Rds On Max. Features STripFET™ II technology with a 3V Threshold Voltage and 60W Max Power Dissipation. Packaged in a TO-220 case for through-hole mounting, this MOSFET offers fast switching speeds with a 16ns Turn-On Delay Time and 8ns Fall Time. Operates across a wide temperature range from -55°C to 175°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STP14NF12 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
120V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
120V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
460pF
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
3V
Turn-Off Delay Time
32ns
Turn-On Delay Time
16ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP14NF12 Datasheet
Download the complete datasheet for Stmicroelectronics STP14NF12 to view detailed technical specifications.
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