N-Channel POWER MOSFET featuring 500V drain-source breakdown voltage and 14A continuous drain current. Offers 340mR maximum drain-source on-resistance and 150W power dissipation. This SuperMesh™ device is housed in a TO-220 package for through-hole mounting and includes Zener protection. Key switching parameters include a 12ns fall time, 24ns turn-on delay, and 54ns turn-off delay. Operating temperature range is -55°C to 150°C.
PackageTO-220
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP14NK50Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
340mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
2nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
3.75V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
54ns
Turn-On Delay Time
24ns
DC Rated Voltage
500V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP14NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STP14NK50Z to view detailed technical specifications.
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