N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 12A continuous drain current. This single element transistor utilizes MDmesh II process technology and is housed in a TO-220AB package with 3 through-hole pins and a tab. Key specifications include a maximum gate-source voltage of ±25V, a maximum drain-source on-resistance of 320 mOhm at 10V, and a maximum power dissipation of 90W. Operating temperature range is -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP14NM50N technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh II
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
12A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
320@10VmOhm
Typical Gate Charge @ Vgs
27@10VnC
Typical Gate Charge @ 10V
27nC
Typical Input Capacitance @ Vds
816@50VpF
Maximum Power Dissipation
90000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STP14NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP14NM50N to view detailed technical specifications.
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