N-channel MOSFET featuring 55V drain-source breakdown voltage and a low 6mΩ drain-source on-resistance. This power MOSFET offers a continuous drain current of 120A and a maximum power dissipation of 300W, suitable for through-hole mounting in a TO-220AB package. Key switching characteristics include a 35ns turn-on delay and 80ns fall time, with an input capacitance of 4.4nF. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is designed for demanding applications.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STP150NF55 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 6MR |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP150NF55 Datasheet
Download the complete datasheet for Stmicroelectronics STP150NF55 to view detailed technical specifications.
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