N-channel MOSFET featuring 55V drain-source breakdown voltage and a low 6mΩ drain-source on-resistance. This power MOSFET offers a continuous drain current of 120A and a maximum power dissipation of 300W, suitable for through-hole mounting in a TO-220AB package. Key switching characteristics include a 35ns turn-on delay and 80ns fall time, with an input capacitance of 4.4nF. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is designed for demanding applications.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STP150NF55 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
6MR
Fall Time
80ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.4nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
6mR
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
140ns
Turn-On Delay Time
35ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP150NF55 Datasheet
Download the complete datasheet for Stmicroelectronics STP150NF55 to view detailed technical specifications.
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