N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 308mΩ typical drain-source on-resistance and 85W maximum power dissipation. Encased in a TO-220 package, it operates from -55°C to 150°C and includes a 25V gate-source voltage rating. The device is RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power85W
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Technical Specifications
Stmicroelectronics STP15N65M5 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
340mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
340MR
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
810pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
85W
Radiation Hardening
No
Rds On Max
340mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
30ns
Turn-On Delay Time
30ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP15N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP15N65M5 to view detailed technical specifications.
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