N-Channel SuperMESH™ POWER MOSFET featuring 500V drain-to-source breakdown voltage and 14A continuous drain current. This through-hole component offers a low 340mΩ drain-to-source resistance and 40W power dissipation. Key electrical characteristics include a 3.75V threshold voltage, 2.26nF input capacitance, and fast switching times with a 15ns fall time. Housed in a TO-220-3 package, it operates from -50°C to 150°C and is RoHS compliant.
PackageTO-220-3
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP15NK50ZFP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
340mR
Drain to Source Voltage (Vdss)
500V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
9.3mm
Input Capacitance
2.26nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
40W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Rds On Max
340mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
62ns
Turn-On Delay Time
20ns
DC Rated Voltage
500V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP15NK50ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP15NK50ZFP to view detailed technical specifications.
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