The STP15NM60N is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 14A. The device is packaged in a TO-220AB flange mount package and is RoHS compliant. It has a maximum power dissipation of 125W and a gate to source voltage of 25V.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Stmicroelectronics STP15NM60N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.25nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 299mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP15NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP15NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
