N-channel power MOSFET featuring 100V drain-source breakdown voltage and 5.5mΩ maximum drain-source on-resistance. This device offers a continuous drain current of 120A and a maximum power dissipation of 315W. Designed with STripFET™ DeepGATE™ technology, it exhibits fast switching characteristics with turn-on delay time of 29.6ns and fall time of 106ns. Packaged in a TO-220 through-hole mount, this RoHS compliant component operates from -55°C to 175°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power315W
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Technical Specifications
Stmicroelectronics STP165N10F4 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 5.5MR |
| Fall Time | 106ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 315W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 315W |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ DeepGATE™ |
| Turn-Off Delay Time | 154ns |
| Turn-On Delay Time | 29.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP165N10F4 Datasheet
Download the complete datasheet for Stmicroelectronics STP165N10F4 to view detailed technical specifications.
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