N-channel power MOSFET with 60V drain-source breakdown voltage and 11A continuous drain current. Features 100mΩ maximum drain-source on-resistance and 25W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220-3 through-hole mount configuration, this component is RoHS compliant. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 6ns.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP16NF06FP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Height
16.4mm
Input Capacitance
315pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
4V
Turn-Off Delay Time
17ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP16NF06FP Datasheet
Download the complete datasheet for Stmicroelectronics STP16NF06FP to view detailed technical specifications.
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