N-CHANNEL Power MOSFET featuring 600V drain-source breakdown voltage and 14A continuous drain current. This through-hole component offers a low 0.42ohm drain-source on-resistance and a maximum power dissipation of 190W. Operating across a wide temperature range from -55°C to 150°C, it is housed in a TO-220AB package and is RoHS compliant. Key switching characteristics include a 30ns turn-on delay and a 15ns fall time.
PackageTO-220
Current Rating14A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP16NK60Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
420mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
38R
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
2.65nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
420mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
70ns
Turn-On Delay Time
30ns
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP16NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STP16NK60Z to view detailed technical specifications.
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