N-CHANNEL POWER MOSFET featuring 650V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers 500mΩ Rds On resistance and a maximum power dissipation of 190W. Key switching characteristics include a 25ns turn-on delay and 17ns fall time. Packaged in TO-220AB, it operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220AB
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP16NK65Z technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
650V
Fall Time
17ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.75nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
500mR
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
68ns
Turn-On Delay Time
25ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP16NK65Z Datasheet
Download the complete datasheet for Stmicroelectronics STP16NK65Z to view detailed technical specifications.
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