N-CHANNEL POWER MOSFET featuring 650V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers 500mΩ Rds On resistance and a maximum power dissipation of 190W. Key switching characteristics include a 25ns turn-on delay and 17ns fall time. Packaged in TO-220AB, it operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220AB
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP16NK65Z technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.75nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP16NK65Z Datasheet
Download the complete datasheet for Stmicroelectronics STP16NK65Z to view detailed technical specifications.
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