N-channel power MOSFET featuring 620V drain-source breakdown voltage and 15.5A continuous drain current. Offers a low 380mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 190W. Key switching parameters include a 22ns turn-on delay and 63ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP17N62K3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15.5A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
280mR
Fall Time
63ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
380mR
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
91ns
Turn-On Delay Time
22ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP17N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP17N62K3 to view detailed technical specifications.
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