N-channel power MOSFET featuring 250V drain-source breakdown voltage and 17A continuous drain current. This TO-220 package component offers a low 165mΩ drain-source on-resistance and 90W maximum power dissipation. Designed for through-hole mounting, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include an 8.8ns turn-on delay and 8.8ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
Quick Jump:
Technical Specifications
Stmicroelectronics STP17NF25 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
165mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
165mR
Fall Time
8.8ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
165mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
21ns
Turn-On Delay Time
8.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP17NF25 Datasheet
Download the complete datasheet for Stmicroelectronics STP17NF25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
