N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 4.5mΩ drain-source on-resistance. This component offers a continuous drain current of 120A and a maximum power dissipation of 315W, suitable for through-hole mounting in a TO-220 package. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a fall time of 6.9ns and turn-on delay of 25.6ns. The device is RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power315W
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Technical Specifications
Stmicroelectronics STP180N10F3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 5.1MR |
| Fall Time | 6.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.665nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 315W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 315W |
| Radiation Hardening | No |
| Rds On Max | 5.1mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 99.9ns |
| Turn-On Delay Time | 25.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP180N10F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP180N10F3 to view detailed technical specifications.
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