N-channel power MOSFET featuring 55V drain-source breakdown voltage and 120A continuous drain current. This through-hole component offers a low 3.8mΩ drain-source on-resistance and 330W maximum power dissipation. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with a 25ns turn-on delay and 50ns fall time. The TO-220AB package is RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power330W
Quick Jump:
Technical Specifications
Stmicroelectronics STP180N55F3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 3.8MR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 25ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP180N55F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP180N55F3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
