N-channel power MOSFET featuring 55V drain-source breakdown voltage and 120A continuous drain current. This through-hole component offers a low 3.8mΩ drain-source on-resistance and 330W maximum power dissipation. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with a 25ns turn-on delay and 50ns fall time. The TO-220AB package is RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power330W
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Technical Specifications
Stmicroelectronics STP180N55F3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
3.8mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
3.8MR
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
6.8nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
330W
Radiation Hardening
No
Rds On Max
3.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
4V
Turn-Off Delay Time
110ns
Turn-On Delay Time
25ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP180N55F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP180N55F3 to view detailed technical specifications.
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