The STP185N55F3 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a maximum drain to source breakdown voltage of 55V and a continuous drain current of 120A. The device has a maximum power dissipation of 330W and a drain to source resistance of 3.5mR. It is available in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power330W
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Technical Specifications
Stmicroelectronics STP185N55F3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.8nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP185N55F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP185N55F3 to view detailed technical specifications.
No datasheet is available for this part.