N-channel power MOSFET featuring 800V drain-source breakdown voltage and 17A continuous drain current. This MDmesh™ series component offers a low 295mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 190W. Key switching characteristics include an 18ns turn-on delay and 96ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP18NM80 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
295mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
295MR
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
2.07nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
295mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
96ns
Turn-On Delay Time
18ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP18NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STP18NM80 to view detailed technical specifications.
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