Stmicroelectronics
STP190N55LF3
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power312W
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Technical Specifications
Stmicroelectronics STP190N55LF3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 3.7R |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 18V |
| Input Capacitance | 6.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 312W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP190N55LF3 Datasheet
Download the complete datasheet for Stmicroelectronics STP190N55LF3 to view detailed technical specifications.
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