Stmicroelectronics
STP190N55LF3
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power312W
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Technical Specifications
Stmicroelectronics STP190N55LF3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
3.7mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
3.7R
Fall Time
40ns
Gate to Source Voltage (Vgs)
18V
Input Capacitance
6.2nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
312W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
312W
Radiation Hardening
No
Rds On Max
3.7mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
160ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP190N55LF3 Datasheet
Download the complete datasheet for Stmicroelectronics STP190N55LF3 to view detailed technical specifications.
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