N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 160mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of 15A and a maximum power dissipation of 90W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220 package. Key switching characteristics include an 11ns fall time and 11.5ns turn-on delay time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP19NF20 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
160mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
800pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MESH OVERLAY™
Threshold Voltage
3V
Turn-Off Delay Time
19ns
Turn-On Delay Time
11.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP19NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STP19NF20 to view detailed technical specifications.
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