N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 160mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of 15A and a maximum power dissipation of 90W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-220 package. Key switching characteristics include an 11ns fall time and 11.5ns turn-on delay time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP19NF20 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.15mm |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MESH OVERLAY™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 11.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP19NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STP19NF20 to view detailed technical specifications.
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