N-CHANNEL POWER MOSFET with 200V Drain to Source Voltage (Vdss) and 18A Continuous Drain Current (ID). Features 125mR Rds On Max, 90W Max Power Dissipation, and TO-220AB package for through-hole mounting. Operates from -50°C to 150°C with a 20V Gate to Source Voltage (Vgs). Includes 15ns Turn-On Delay Time and 40ns Turn-Off Delay Time. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP20N20 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
200V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
940pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
90W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
125mR
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP20N20 Datasheet
Download the complete datasheet for Stmicroelectronics STP20N20 to view detailed technical specifications.
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