N-CHANNEL POWER MOSFET with 200V Drain to Source Voltage (Vdss) and 18A Continuous Drain Current (ID). Features 125mR Rds On Max, 90W Max Power Dissipation, and TO-220AB package for through-hole mounting. Operates from -50°C to 150°C with a 20V Gate to Source Voltage (Vgs). Includes 15ns Turn-On Delay Time and 40ns Turn-Off Delay Time. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP20N20 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 940pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP20N20 Datasheet
Download the complete datasheet for Stmicroelectronics STP20N20 to view detailed technical specifications.
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