N-Channel Power MOSFET featuring FDmesh™ technology, designed for high voltage applications. Offers a 500V drain-source breakdown voltage and a maximum continuous drain current of 20A. Achieves a low on-resistance of 250mΩ at a 10V gate-source voltage. Includes an integrated fast recovery diode for enhanced switching performance. Packaged in a TO-220AB through-hole mount, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 192W.
PackageTO-220AB
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP20NM50FD technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.38nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 192W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP20NM50FD Datasheet
Download the complete datasheet for Stmicroelectronics STP20NM50FD to view detailed technical specifications.
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