N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. Offers a low 0.20 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 45W. Includes fast switching characteristics with a 8.5ns fall time and 9ns turn-off delay. RoHS compliant and operates within a -65°C to 150°C temperature range.
PackageTO-220-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP20NM50FP technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 1.48nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | 550V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP20NM50FP Datasheet
Download the complete datasheet for Stmicroelectronics STP20NM50FP to view detailed technical specifications.
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