The STP20NM60A is a 20A N-CHANNEL MOSFET with a drain to source breakdown voltage of 600V and a drain to source resistance of 290mR. It has a maximum operating temperature range of -55°C to 150°C and is compliant with RoHS standards. The device is packaged in a TO-220AB package and is available in quantities of 50. It features a fall time of 20ns and a turn-off delay time of 46ns.
PackageTO-220AB
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP20NM60A technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 192W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 46ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP20NM60A Datasheet
Download the complete datasheet for Stmicroelectronics STP20NM60A to view detailed technical specifications.
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