N-Channel Power MOSFET, TO-220 package, featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers a maximum drain-source on-resistance of 270mΩ. Operates with a gate-source voltage up to 25V and a maximum power dissipation of 160W. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 20ns. RoHS compliant and suitable for through-hole mounting.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power160W
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Technical Specifications
Stmicroelectronics STP20NM65N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1.28nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 15ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP20NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STP20NM65N to view detailed technical specifications.
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