N-Channel Power MOSFET featuring 75V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.7mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component operates within a -55°C to 175°C temperature range with a maximum power dissipation of 300W. Key electrical characteristics include a 2V threshold voltage and 11.8nF input capacitance.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Stmicroelectronics STP210N75F6 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 3.7MR |
| Fall Time | 71ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 11.8nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 154ns |
| Turn-On Delay Time | 34ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP210N75F6 Datasheet
Download the complete datasheet for Stmicroelectronics STP210N75F6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
