N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 17A continuous drain current. Offers a low 0.150 Ohm typical drain-to-source resistance, with a maximum of 190mR. Designed for through-hole mounting in a TO-220 package, this component supports a gate-to-source voltage of 25V and has a maximum power dissipation of 125W. Operating temperature range spans from -55°C to 150°C, with RoHS compliance.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Stmicroelectronics STP21N65M5 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1.95nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP21N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP21N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
