N-channel power MOSFET featuring 600V drain-source voltage and 16A continuous drain current. This MDmesh™ II series component offers a low 220mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 125W. Key switching characteristics include a 3V threshold voltage, 11ns turn-on delay, and 38ns fall time.
PackageTO-220
MountingThrough Hole
Power125W
Quick Jump:
Technical Specifications
Stmicroelectronics STP22NM60N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 220mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 11ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP22NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP22NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
