N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. This through-hole component offers a low 0.175 Ohm typical drain-source resistance and 150W power dissipation. Designed for efficient switching, it exhibits fast switching times with turn-on delay at 15ns and fall time at 15ns. Housed in a TO-220 package, this RoHS compliant MOSFET operates across a wide temperature range from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP24N60DM2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.055nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II Plus |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.01164oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP24N60DM2 Datasheet
Download the complete datasheet for Stmicroelectronics STP24N60DM2 to view detailed technical specifications.
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