N-channel Power MOSFET, MDmesh™ II series, featuring 600V drain-source voltage and 17A continuous drain current. Offers low on-resistance with a maximum of 190mΩ at 10Vgs. Packaged in a TO-220 through-hole mount, this component boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 11.5ns turn-on delay and 37ns fall time. RoHS compliant and lead-free.
Stmicroelectronics STP24NM60N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 168mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 11.5ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP24NM60N to view detailed technical specifications.
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