N-channel power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. Offers a low 0.16 ohm maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this RoHS compliant component boasts a maximum power dissipation of 160W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 24ns fall time and 94ns turn-off delay time.
PackageTO-220AB
Voltage650V
Current20A
Current Rating20A
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Technical Specifications
Stmicroelectronics STP25NM60N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 21A |
| Current | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 94ns |
| Voltage | 650V |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP25NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP25NM60N to view detailed technical specifications.
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