N-channel Power MOSFET, 600V drain-source breakdown voltage, 22A continuous drain current. Features low on-resistance of 0.135 Ohm typical, 150mOhm maximum, and 600V drain-source voltage. Housed in a TO-220 package with through-hole mounting. Operates from -55°C to 150°C with a maximum power dissipation of 190W. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP28N60M2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1.37nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 14.5ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP28N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP28N60M2 to view detailed technical specifications.
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