N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 2A continuous drain current. This through-hole component offers a low 3.5 Ohm typical drain-to-source resistance and a maximum of 4.5 Ohm Rds On. Operating within a -55°C to 150°C temperature range, it has a maximum power dissipation of 45W and an input capacitance of 95pF. Packaged in a TO-220-3 configuration, this RoHS compliant device is designed for efficient power switching applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP2N80K5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 95pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP2N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP2N80K5 to view detailed technical specifications.
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