N-channel Power MOSFET, 950V Drain to Source Breakdown Voltage, 2A Continuous Drain Current, and 4.2 Ohm typical Drain to Source Resistance. Features include 8.5ns Turn-On Delay Time, 20.5ns Turn-Off Delay Time, and 32.5ns Fall Time. This component operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 45W. Packaged in a TO-220-3 through-hole mount, it is RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP2N95K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
4.2R
Drain to Source Voltage (Vdss)
950V
Fall Time
32.5ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
105pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
20.5ns
Turn-On Delay Time
8.5ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP2N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP2N95K5 to view detailed technical specifications.
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